FULL-BAND-STRUCTURE CALCULATION OF 2ND-HARMONIC GENERATION IN ODD-PERIOD STRAINED (SI)N/(GE)N SUPERLATTICES

被引:121
作者
GHAHRAMANI, E
MOSS, DJ
SIPE, JE
机构
[1] UNIV TORONTO,ONTARIO LASER & LIGHTWAVE RES CTR,TORONTO M5S 1A7,ONTARIO,CANADA
[2] NATL RES COUNCIL CANADA,OTTAWA K1A 0R6,ONTARIO,CANADA
来源
PHYSICAL REVIEW B | 1991年 / 43卷 / 11期
关键词
D O I
10.1103/PhysRevB.43.8990
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We report a full-band-structure calculation of frequency-dependent second-harmonic generation in odd-period strained [(Si)n/(Ge)n]/Si (001) superlattices for n = 1, 3, and 5. We derive sum rules to show that for materials with filled valence bands and empty conduction bands, independent of crystal symmetry, the expression for X<-->(2) (-2-omega; omega, omega) does not diverge in the zero-frequency limit. We use a minimal-basis orthogonalized linear combination of Gaussian orbitals technique, in conjunction with a linearized sampling method, to obtain X<-->(2)(-2-omega; omega, omega). We then use these results and a simple model to estimate second-harmonic generation at Si/Ge interfaces.
引用
收藏
页码:8990 / 9002
页数:13
相关论文
共 34 条
[1]   ENERGY-BAND THEORY OF SECOND-ORDER NONLINEAR OPTICAL SUSCEPTIBILITY OF CRYSTALS OF ZINCBLENDE SYMMETRY [J].
ASPNES, DE .
PHYSICAL REVIEW B, 1972, 6 (12) :4648-4659
[2]   DIELECTRIC FUNCTIONS AND OPTICAL-PARAMETERS OF SI, GE, GAP, GAAS, GASB, INP, INAS, AND INSB FROM 1.5 TO 6.0 EV [J].
ASPNES, DE ;
STUDNA, AA .
PHYSICAL REVIEW B, 1983, 27 (02) :985-1009
[3]   STRUCTURE AND OPTICAL-PROPERTIES OF GE-SI ORDERED SUPERLATTICES [J].
BEVK, J ;
OURMAZD, A ;
FELDMAN, LC ;
PEARSALL, TP ;
BONAR, JM ;
DAVIDSON, BA ;
MANNAERTS, JP .
APPLIED PHYSICS LETTERS, 1987, 50 (12) :760-762
[4]   DISPERSION OF OPTICAL NONLINEARITY IN SEMICONDUCTORS [J].
CHANG, RK ;
DUCUING, J ;
BLOEMBER.N .
PHYSICAL REVIEW LETTERS, 1965, 15 (09) :415-&
[5]  
CIRCAI S, 1988, PHYS REV B, V38, P1835
[6]   THEORETICAL STUDIES ON DISPERSION OF NONLINEAR OPTICAL SUSCEPTIBILITIES IN GAAS, INAS, AND INSB [J].
FONG, CY ;
SHEN, YR .
PHYSICAL REVIEW B, 1975, 12 (06) :2325-2335
[7]   NEW OPTICAL-TRANSITIONS IN STRAINED SI-GE SUPERLATTICES [J].
FROYEN, S ;
WOOD, DM ;
ZUNGER, A .
PHYSICAL REVIEW B, 1987, 36 (08) :4547-4550
[8]   STRUCTURAL AND ELECTRONIC-PROPERTIES OF EPITAXIAL THIN-LAYER SIN GEN SUPERLATTICES [J].
FROYEN, S ;
WOOD, DM ;
ZUNGER, A .
PHYSICAL REVIEW B, 1988, 37 (12) :6893-6907
[9]   TRANSFER-MATRIX METHOD FOR THE COMPLEX BAND-STRUCTURE OF SUPERLATTICES [J].
GHAHRAMANI, E ;
SIPE, JE .
PHYSICAL REVIEW B, 1989, 40 (02) :1102-1109
[10]   LINEAR OPTICAL-PROPERTIES OF STRAINED (SI)N/(GE)N SUPERLATTICES ON (001) SI SUBSTRATES [J].
GHAHRAMANI, E ;
MOSS, DJ ;
SIPE, JE .
PHYSICAL REVIEW B, 1990, 41 (08) :5112-5125