IMAGE FORCE EFFECTS ON CARRIER COLLECTION IN A-SI-H SOLAR-CELLS

被引：6

作者：

HAN, MK ^{[1
]}

ANDERSON, WA ^{[1
]}

LAHRI, R ^{[1
]}

COLEMAN, J ^{[1
]}

机构：

[1] PLASMA PHYS CORP, LOCUST VALLEY, NY 11560 USA

来源：

APPLIED PHYSICS LETTERS | 1981年 / 39卷 / 04期

关键词：

D O I：

10.1063/1.92708

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：325 / 327

页数：3

相关论文

共 12 条

[1] CARLSON DE, 1979, AMORPHOUS SEMICONDUC
[2] DEBENEY BT, 1978, SOLID STATE ELECTRON, V2, P515
[3] DEPLETION LAYER COLLECTION EFFICIENCY FOR P-N-JUNCTION, SCHOTTKY DIODE, AND SURFACE INSULATOR SOLAR CELLS
GREEN, MA
[J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (02) : 547 - 554
[4] HAN MK, 1980, XS980419 US DEP EN F
[5] HAN MK, UNPUBLISHED
[6] SZE SM, 1969, PHYSICS SEMICONDUCTO
[7] THEKAEKARA MP, 1974, DATA INCIDENT SOLAR
[8] ELECTRON-TRANSPORT IN HYDROGENATED AMORPHOUS-SILICON - DRIFT MOBILITY AND JUNCTION CAPACITANCE
TIEDJE, T
WRONSKI, CR
ABELES, B
CEBULKA, JM
[J]. SOLAR CELLS, 1980, 2 (03): : 301 - 318
[9] DEEP HOLE TRAPS IN HIGH-EFFICIENCY SHOTTKY BARRIER SOLAR-CELLS ON SPUTTERED AMORPHOUS-SILICON AS EVIDENCED BY SPECTRAL RESPONSE AND THERMALLY STIMULATED CURRENT MEASUREMENTS
VIEUXROCHAZ, L
CHENEVASPAULE, A
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) : 737 - 742
[10] INTERPRETATION OF THE CONDUCTANCE AND CAPACITANCE FREQUENCY-DEPENDENCE OF HYDROGENATED AMORPHOUS-SILICON SCHOTTKY-BARRIER DIODES
VIKTOROVITCH, P
MODDEL, G
[J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (09) : 4847 - 4854