1ST-PRINCIPLES INVESTIGATION OF GEOMETRIC AND ELECTRONIC-STRUCTURES OF ALUMINUM ABSORBED ON SILICON SURFACES

被引：29

作者：

DEV, BN ^{[1
]}

MOHAPATRA, SM ^{[1
]}

MISHRA, KC ^{[1
]}

GIBSON, WM ^{[1
]}

DAS, TP ^{[1
]}

机构：

[1] SUNY COLL BUFFALO,DEPT PHYS,BUFFALO,NY 14222

来源：

PHYSICAL REVIEW B | 1987年 / 36卷 / 05期

关键词：

D O I：

10.1103/PhysRevB.36.2666

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：2666 / 2674

页数：9

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