TUNNELING STUDIES ON THIN-FILM NB-AL ALLOYS

被引：7

作者：

YEH, JTC

TSUEI, CC

机构：

[1] IBM Thomas J. Watson Research Center, New York 10598, Yorktown Heights

来源：

IEEE TRANSACTIONS ON MAGNETICS | 1979年 / 15卷 / 01期

关键词：

D O I：

10.1109/TMAG.1979.1060171

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Relatively high quality Josephson tunnel junctions have been fabricated using e-beam coevaporated Nb-Al thin film alloys as the base electrode. Alloys of various Al concentrations, and deposited at several substrate temperatures, have been studied. Structure analysis indicates that these alloys contain metastable disordered bee and/or amorphous phases. Low excess tunneling currents and a small barrier dielectric constant (er~5) can be achieved by oxidizing an aluminum layer which is deposited on the base electrode as the tunnel barrier. © 1979 IEEE

引用

页码：591 / 592

页数：2

共 8 条

[1] SOME TEMPERATURE-DEPENDENT PROPERTIES OF NIOBIUM TUNNEL-JUNCTIONS [J].