GROWTH OF BULK CUGAS2 SINGLE-CRYSTALS USING SOLUTION BRIDGMAN METHOD

被引：12

作者：

MIYAKE, H

SUGIYAMA, K

机构：

[1] Department of Electrical Engineering, Mie University, Tsu, Mie

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1990年 / 29卷 / 06期

关键词：

Bulk single crystal growth; Cuga)n[!sub]1[!/sub]-xS[!sub]2[!/sub; Cugas[!sub]2[!/sub; Cugas[!sub]2[!/sub]-In system; Solution Bridgman method; Solution growth;

D O I：

10.1143/JJAP.29.L1001

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Bulk CuGaS2 single crystals have been grown using a modified Bridgman technique from In solutions (solution Bridgman method). At temperatures below 1020°C, where a miscibility gap exists in the In solutions with a stoichiometric CuGaS2 solute, sulfur-excess In solutions are required for obtaining single crystals. The crystals are generally CuGaxIn1-xS2 alloys with (1-x)=0.03–0.06 due to partial occupation of Ga sites by In atoms. © 1990 The Japan Society of Applied Physics.

引用

页码：L1001 / L1003

页数：3

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