EFFICIENT RESONANT POWER CONVERSION

被引：18

作者：

VALTCHEV, SS

KLAASSENS, JB

机构：

[1] Laboratory for Power Electronics, Delft University of Technology Delft

[2] Higher Institute for Mechanical and Electrical Engineering, “VMEI Lenin,” Sofia

[3] Laboratory for Power Electronics, Delft University of Technology, Delft

来源：

IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS | 1990年 / 37卷 / 06期

关键词：

D O I：

10.1109/41.103453

中图分类号：

TP [自动化技术、计算机技术];

学科分类号：

0812 ;

摘要：

Power MOSFET's are still not powerful enough for thyristors, but for some applications, their features (such as the controllable turn-off capability) could present an advantage. The major losses in MOS devices are ohmic losses due to the on resistance of the device. The mode of operation and the precise region of improved efficiency are described for series-resonant power converters employing MOS transistors. This paper considers switching frequencies that are higher than the resonant frequency of the LC circuit only. The derived equations are generalized. Plots are used to discuss the selection of the switching frequency to maximize the efficiency.

引用

页码：490 / 495

页数：6

共 9 条

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