METAL-INSULATOR-TRANSITION AND CHARGE FLUCTUATION IN THE D-P MODEL

被引：29

作者：

HIRASHIMA, DS ^{[1
]}

ONO, Y ^{[1
]}

MIURA, K ^{[1
]}

MATSUURA, T ^{[1
]}

JICHU, H ^{[1
]}

机构：

[1] AICHI UNIV EDUC,DEPT PHYS,KARIYA 448,JAPAN

来源：

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN | 1991年 / 60卷 / 07期

关键词：

D O I：

10.1143/JPSJ.60.2269

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Electronic states in the d-p model, particularly those around the half-filled case, are investigated with the help of the auxiliary boson method and the 1/N-expansion. The critical value of the charge transfer energy for a metal-insulator transition to occur at the half-filled case is evaluated. The analytic expression for the charge susceptibility is given. Then characteristics of the charge fluctuation around the transition point are clarified; it is found that the charge susceptibility vanishes on the critical point. Furthermore, dependence of the charge susceptibility on the hole number and on the charge transfer energy is studied. Relevance to high temperature superconducting materials is then discussed.

引用

页码：2269 / 2284

页数：16

共 34 条

[1] KONDO BOSONS AND THE KONDO LATTICE - MICROSCOPIC BASIS FOR THE HEAVY FERMI-LIQUID [J].