LOW-TEMPERATURE ANNEALING OF ION-IMPLANTATION-INDUCED DEFECTS IN GAAS BY MINORITY-CARRIER INJECTION

被引：8

作者：

WADA, K

NAKANISHI, H

YAMADA, K

机构：

[1] NTT LSI Laboratories, Atsugi, Kanagawa 243-01

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 18期

关键词：

D O I：

10.1063/1.110470

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This letter demonstrates that minority-carrier injection entirely removes ion-implantation-induced defects in GaAs at temperatures as low as 200-degrees-C, where no annealing is observed as a result of a simple thermal annealing. The enhancement mechanism is discussed within the framework of recombination-enhanced defect reaction. The present findings have opened the door to ''room temperature semiconductor material processing.''

引用

页码：2525 / 2527

页数：3

共 5 条

[1]

KIMERLING LC, 1975, I PHYS C SER, V23, P589

[2] ROOM-TEMPERATURE DAMAGE REMOVAL FROM INP BY OPTICAL-PUMPING [J].