RTE MEASUREMENT WITH XE52+ IONS CHANNELED IN A SI CRYSTAL

被引:17
作者
ANDRIAMONJE, S
CHEVALLIER, M
COHEN, C
CUE, N
DAUVERGNE, D
DURAL, J
GENRE, R
GIRARD, Y
KIRSCH, R
LHOIR, A
POIZAT, JC
QUERE, Y
REMILLIEUX, J
SCHMAUS, D
TOULEMONDE, M
机构
[1] UNIV LYON 1,INST PHYS NUCL LYON,F-69622 VILLEURBANNE,FRANCE
[2] UNIV LYON 1,INST NATL PHYS NUCL & PHYS PARTICULES,F-69622 VILLEURBANNE,FRANCE
[3] HONG KONG UNIV SCI & TECHNOL,DEPT PHYS,KOWLOON,HONG KONG
[4] CTR INTERDISCIPLINAIRE RECH IONS LOURDS,F-14040 CAEN,FRANCE
[5] UNIV PARIS 07,PHYS SOLIDES GRP,F-75251 PARIS 05,FRANCE
[6] ECOLE POLYTECH,SOLIDES IRRADIES LAB,F-91128 PALAISEAU,FRANCE
[7] CEN BORDEAUX,INST NATL PHYS NUCL & PHYS PARTICULES,F-33175 GRADIGNAN,FRANCE
关键词
D O I
10.1016/0375-9601(92)90700-V
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
KLL resonant transfer and excitation (RTE) of 33-43 MeV/nucleon He-like Xe ions channeled along the <110> axis of a thin Si crystal has been investigated in measurements of charge state distributions and of the resulting X-ray production. The resonance peaks obtained by the two methods are quite similar. The charge state measurements show that RTE appears, for well channeled ions, to be rather independent of the electron density they sample. Resonance energy, width and intensity are compared with theoretical estimates.
引用
收藏
页码:184 / 190
页数:7
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