ION-BEAM SPUTTERING AND ITS APPLICATION FOR DEPOSITION OF SEMICONDUCTING FILMS

被引：46

作者：

WEISSMANTEL, C ^{[1
]}

FIEDLER, O ^{[1
]}

HECHT, G ^{[1
]}

REISSE, G ^{[1
]}

机构：

[1] TH KARL MARX STADT, SEKT PHYS, KARL MARX STA, EAST GERMANY

来源：

关键词：

D O I：

10.1016/0040-6090(72)90306-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：359 / 366

页数：8

共 13 条

[1]

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[2]

ARDENNE MV, 1964, Patent No. 44819

[3]

CHOPRA KL, 1967, REV SCI INSTRUM, V38, P8

[4]

FIEDLER O, 1968, 4 P INT VAC C MANCH, P569

[5]

FIEDLER O, 1969, Patent No. 137744

[6]

FIEDLER O, 1968, Patent No. 136161

HERBERGER, J ;

LEHNERT, K ;

WEISSMAN.C .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1971, 4 (02) :K87-+

[8]

REISSE G, 1970, WISSENSCHAFTL Z TECH, P529

[9]

SAGER O, 1971, VAKUUM-TECH, V20, P225

[10] GROWTH OF EPITAXIAL SILICON LAYERS BY ION BEAM SPUTTERING [J].

UNVALA, BA ;

PEARMAIN, K .