COMPATIBILITY OF X-RAY LITHOGRAPHY AND SOS DEVICE FABRICATION

被引：5

作者：

GALLOWAY, KF

MAYO, S

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1978年 / 25卷 / 05期

关键词：

D O I：

10.1109/T-ED.1978.19129

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：549 / 550

页数：2

共 8 条

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[2]

GALLOWAY KF, UNPUBLISHED

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[7] POLYMERIC RESISTS FOR X-RAY LITHOGRAPHY [J].

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SPENCER, EG .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (11) :1500-1503

[8] RADIATION-INDUCED LEAKAGE CURRENTS IN SILICON ON SAPPHIRE MOS-TRANSISTORS [J].

WANG, ST ;

ROYCE, BSH .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1976, 23 (06) :1586-1589

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