ELECTRIC-FIELD DISTRIBUTIONS IN A MOLECULAR-BEAM EPITAXY GA0.83AL0.17AS/GAAS/GAAS STRUCTURE USING PHOTOREFLECTANCE

被引：31

作者：

SHEN, H

POLLAK, FH

WOODALL, JM

SACKS, RN

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

[2] UNITED TECHNOL RES CTR,E HARTFORD,CT 06108

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1989年 / 7卷 / 04期

关键词：

D O I：

10.1116/1.584604

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：804 / 806

页数：3

共 14 条

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[8]

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[10] PHOTOREFLECTANCE AND PHOTOREFLECTANCE-EXCITATION SPECTROSCOPY OF A GAAS/GA0.67AL0.33AS MULTIPLE-QUANTUM-WELL STRUCTURE [J].

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