A TOPOLOGICAL THEORY OF DOMAIN VELOCITY IN SEMICONDUCTORS

被引：16

作者：

GUNN, JB

机构：

来源：

IBM JOURNAL OF RESEARCH AND DEVELOPMENT | 1969年 / 13卷 / 05期

关键词：

D O I：

10.1147/rd.135.0591

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

Theory is given for velocity of free, steadily traveling domain of high electric field in semiconductor exhibiting negative differential conductivity; explicit results are derived for cases for which domain behavior is dominated either by (electric-field dependent) diffusion of electron, or by rate of transfer of electrons between states having different mobilities; solution for electric-field distribution has required properties only if system of differential equations involved possesses singular points with special topological properties.

引用

页码：591 / &

共 13 条

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