GAAS(110) TERRACE-WIDTH DISTRIBUTIONS AND KINK FORMATION

被引：29

作者：

YANG, YN

TRAFAS, BM

SIEFERT, RL

WEAVER, JH

机构：

[1] Department of Materials Science and Chemical Engineering, University of Minnesota, Minneapolis

来源：

PHYSICAL REVIEW B | 1991年 / 44卷 / 07期

关键词：

D O I：

10.1103/PhysRevB.44.3218

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Scanning-tunneling-microscopy studies of [112BAR] and [110BAR] step structures on cleaved GaAs(110) show that [112BAR] steps are straight whereas [110BAR] steps are made up of kinks along [112BAR]. These step and kink structures are very different from those on Si surfaces. Through quantitative analysis of terrace-width and kink-length distributions, we show that [110BAR] steps are weakly interacting while kinks are noninteracting.

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页码：3218 / 3221

页数：4

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