ANGLE-RESOLVED LIGHT-SCATTERING-STUDIES OF SILICON-ON-SAPPHIRE

被引：6

作者：

PICKERING, C

DIXON, S

GASSON, DB

ROBBINS, DJ

HODGE, AM

机构：

[1] Royal Signals & Radar, Establishment, Great Malvern, Engl, Royal Signals & Radar Establishment, Great Malvern, Engl

来源：

JOURNAL OF CRYSTAL GROWTH | 1987年 / 84卷 / 01期

关键词：

The authors would like to thank GEC Hirst Research Centre for loan of the SOS wafers and in particular C. Dineen and T.B. Peters for X-ray pole figure analysis and UVR No. data respectively. This work is part of an Alvey-funded col- laborative programme. Copyright © Controller; HMSO; London; 1987;

D O I：

10.1016/0022-0248(87)90126-6

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：180 / 183

页数：4

共 6 条

[1] MEASUREMENT OF THE NEAR-SURFACE CRYSTALLINITY OF SILICON ON SAPPHIRE BY UV REFLECTANCE [J].

DUFFY, MT ;

CORBOY, JF ;

CULLEN, GW ;

SMITH, RT ;

SOLTIS, RA ;

HARBEKE, G ;

SANDERCOCK, JR ;

BLUMENFELD, M .

JOURNAL OF CRYSTAL GROWTH, 1982, 58 (01) :10-18

[2]

MCMULLIN PG, 1984, RADCTR84115 ROM AIR

[3]

PICKERING C, IN PRESS

[4]

PICKERING C, 1986, MATER RES SOC S P, V53, P317

[5] SPECULAR REFLECTANCE AND SURFACE-ROUGHNESS OF SILICON ON SAPPHIRE [J].

ROBERTSON, GD ;

BARON, R ;

VASUDEV, PK ;

MARSH, OJ .

JOURNAL OF CRYSTAL GROWTH, 1984, 68 (03) :691-697

[6] STRUCTURAL PERFECTION TESTING OF FILMS AND WAFERS BY MEANS OF OPTICAL SCANNER [J].

STEIGMEIER, EF ;

AUDERSET, H .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (07) :1693-1699

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