EFFECT ON ELECTRICAL-PROPERTIES OF SEGREGATION OF IMPLANTED P+ AT DEFECT SITES IN SI

被引：18

作者：

SADANA, DK

STRATHMAN, M

WASHBURN, J

MAGEE, CW

MAENPAA, M

BOOKER, GR

机构：

[1] RCA LABS,PRINCETON,NJ 08540

[2] CALTECH,PASADENA,CA 91125

[3] UNIV OXFORD,DEPT MET,OXFORD,ENGLAND

来源：

APPLIED PHYSICS LETTERS | 1980年 / 37卷 / 07期

关键词：

D O I：

10.1063/1.92038

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：615 / 618

页数：4

共 13 条

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[2]

Chu W.-K., 1978, BACKSCATTERING SPECT, P89

[3]

DROSD RM, 1979, THESIS U CALIFORNIA

[4]

DROSD RM, LBL9990 REP

[5]

FLETCHER J, 1978, 9TH P INT C EL MICR, V3, P364

[6]

GIBBONS JF, 1975, PROJECTED RANGE STAT

[7]

JENKINS ML, 1979, J MICROS, V98, P155

[8] DEPTH PROFILING OF N-TYPE DOPANTS IN SI AND GAAS USING CS+ BOMBARDMENT NEGATIVE SECONDARY ION MASS-SPECTROMETRY IN ULTRAHIGH-VACUUM [J].

MAGEE, CW .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (04) :660-663

[9]

PETTIT HR, 1971, I PHYS C SER, V10

[10] STRUCTURAL AND ELECTRICAL PROFILES FOR DOUBLE DAMAGE LAYERS IN ION-IMPLANTED SILICON [J].

SADANA, DK ;

FLETCHER, J ;

BOOKER, GR .

ELECTRONICS LETTERS, 1977, 13 (21) :632-633

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