OBSERVATIONS OF SURFACE PLASMON EXCITATION BY TUNNELING ELECTRONS IN GAAS-PB TUNNEL JUNCTIONS

被引：51

作者：

TSUI, DC

机构：

[1] Bell Telephone Laboratories, Incorporated, Murray Hill, NJ

来源：

PHYSICAL REVIEW LETTERS | 1969年 / 22卷 / 07期

关键词：

D O I：

10.1103/PhysRevLett.22.293

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Structure in d2IdV2, which corresponds to an increase in conductance at bias voltages equivalent to the surface plasmon energy in GaAs, is observed in n-type GaAs-Pb tunnel junctions. Its dependence on the electron concentration of the GaAs electrode has been studied. These data are consistent with the interpretation that the observed structure in d2IdV2 is due to surface plasmon excitation in the GaAs electrode by tunneling electrons. © 1969 The American Physical Society.

引用

页码：293 / &

共 11 条

[1]

CONLEY JM, 1965, PHYS REV, V161, P907

[2]

DUKE CB, TO BE PUBLISHED

[3] OPTICAL PHONONS IN SOME VERY THIN 2-6 COMPOUND FILMS [J].