INSITU YBA2CU3O7-X THIN-FILMS EPITAXIALLY GROWN BY SINGLE TARGET DC SPUTTERING

被引：16

作者：

GUILLOUXVIRY, M ^{[1
]}

KARKUT, MG ^{[1
]}

PERRIN, A ^{[1
]}

PENA, O ^{[1
]}

PADIOU, J ^{[1
]}

SERGENT, M ^{[1
]}

机构：

[1] UNIV RENNES 1,CHIM MINERALE LAB B,CNRS,URA 254,F-35042 RENNES,FRANCE

来源：

PHYSICA C | 1990年 / 166卷 / 1-2期

关键词：

D O I：

10.1016/0921-4534(90)90560-2

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have grown in-situ thin films of YBa2Cu3O7-x (YBCO) using a simple DC sputtering system equipped with a single stoichiometric target. Operating at very high sputtering pressures of greater than 1 mbar, we have been able to grow, with excellent reproducibility, primarily c-axis oriented, thin (between 250 and 1000 Å) YBCO films on (100)MgO and (100)SrTiO3 substrates heated to {reversed tilde} 700°C. These films have resistivity ratios R(290 K) R(100 K) between 2.2 and 2.8, resistive Tc onsets between 85 and 89 K, zero resistance between 81 and 86.5 K, and extremely narrow (< 1 K) AC susceptibility transitions indicative of excellent film homogeneity. © 1990.

引用

页码：105 / 110

页数：6

共 11 条

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