TRENDS IN THE ELECTRONIC-PROPERTIES OF SUBSTITUTIONAL 3D TRANSITION-METAL IMPURITIES IN GAAS

[1] ACTIVATION ENERGIES OF CHROMIUM IRON AND NICKEL IN GALLIUM ARSENIDE [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1968, 1 (05) : 593 - +

[2] Allen J.W., 1964, PHYSICS SEMICONDUCTO, P781

[3] BARANOWSKI JM, 1972, PHYS STATUS SOLIDI B, V50, P544

[4] BAZHENOV VK, 1972, SOV PHYS SEMICOND+, V5, P1589

[5] BEKMURATOV MF, 1973, SOV PHYS SEMICOND+, V7, P55

[6] SCATTERING-THEORETIC METHOD FOR DEFECTS IN SEMICONDUCTORS .1. TIGHT-BINDING DESCRIPTION OF VACANCIES IN SI, GE, AND GAAS [J]. PHYSICAL REVIEW B, 1978, 18 (04): : 1780 - 1789

[7] BOIS D, 1974, J PHYS-PARIS, V35, P241

[8] TRANSPORT AND PHOTOELECTRICAL PROPERTIES OF GALLIUM-ARSENIDE CONTAINING DEEP ACCEPTORS [J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (05) : 2242 - &

[9] VACANCIES NEAR SEMICONDUCTOR SURFACES [J]. PHYSICAL REVIEW B, 1979, 20 (12): : 5150 - 5156

[10] FAZZIO A, 1979, J PHYS C SOLID STATE, V12, P3469, DOI 10.1088/0022-3719/12/17/018

[1] ACTIVATION ENERGIES OF CHROMIUM IRON AND NICKEL IN GALLIUM ARSENIDE [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1968, 1 (05) : 593 - +

[2] Allen J.W., 1964, PHYSICS SEMICONDUCTO, P781

[3] BARANOWSKI JM, 1972, PHYS STATUS SOLIDI B, V50, P544

[4] BAZHENOV VK, 1972, SOV PHYS SEMICOND+, V5, P1589

[5] BEKMURATOV MF, 1973, SOV PHYS SEMICOND+, V7, P55

[6] SCATTERING-THEORETIC METHOD FOR DEFECTS IN SEMICONDUCTORS .1. TIGHT-BINDING DESCRIPTION OF VACANCIES IN SI, GE, AND GAAS [J]. PHYSICAL REVIEW B, 1978, 18 (04): : 1780 - 1789

[7] BOIS D, 1974, J PHYS-PARIS, V35, P241

[8] TRANSPORT AND PHOTOELECTRICAL PROPERTIES OF GALLIUM-ARSENIDE CONTAINING DEEP ACCEPTORS [J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (05) : 2242 - &

[9] VACANCIES NEAR SEMICONDUCTOR SURFACES [J]. PHYSICAL REVIEW B, 1979, 20 (12): : 5150 - 5156

[10] FAZZIO A, 1979, J PHYS C SOLID STATE, V12, P3469, DOI 10.1088/0022-3719/12/17/018