PULSED LASER ANNEALING OF ZINC IMPLANTED GAAS

[1] BALK P, 1973, LAYERED DIELECTRICS, P51

[2] BOGATYREV VA, 1977, SOV PHYS SEMICOND+, V11, P56

[3] BOGATYREV VA, 1976, SOV PHYS SEMICOND+, V10, P826

[4] BOLSTOV VV, 1976, SOV PHYS SEMICOND, V10, P338

[5] AMORPHOUS-POLYCRYSTAL TRANSITION INDUCED BY LASER-PULSE IN SELF-ION IMPLANTED SILICON [J]. APPLIED PHYSICS, 1977, 14 (02): : 189 - 191

[6] KACHURIN GA, 1976, SOV PHYS SEMICOND+, V10, P1128

[7] KACHURIN GA, 1976, SOV PHYS SEMICOND, V9, P946

[8] KACHURIN GA, 1977, ION IMPLANTATION SEM, P445

[9] ELECTRICAL PROFILES FROM ZINC IMPLANTED GAAS [J]. ELECTRONICS LETTERS, 1978, 14 (01) : 2 - 4

[10] KUTUKOVA OG, 1976, SOV PHYS SEMICOND+, V10, P265

[1] BALK P, 1973, LAYERED DIELECTRICS, P51

[2] BOGATYREV VA, 1977, SOV PHYS SEMICOND+, V11, P56

[3] BOGATYREV VA, 1976, SOV PHYS SEMICOND+, V10, P826

[4] BOLSTOV VV, 1976, SOV PHYS SEMICOND, V10, P338

[5] AMORPHOUS-POLYCRYSTAL TRANSITION INDUCED BY LASER-PULSE IN SELF-ION IMPLANTED SILICON [J]. APPLIED PHYSICS, 1977, 14 (02): : 189 - 191

[6] KACHURIN GA, 1976, SOV PHYS SEMICOND+, V10, P1128

[7] KACHURIN GA, 1976, SOV PHYS SEMICOND, V9, P946

[8] KACHURIN GA, 1977, ION IMPLANTATION SEM, P445

[9] ELECTRICAL PROFILES FROM ZINC IMPLANTED GAAS [J]. ELECTRONICS LETTERS, 1978, 14 (01) : 2 - 4

[10] KUTUKOVA OG, 1976, SOV PHYS SEMICOND+, V10, P265