CORRELATED-BARRIER HOPPING IN SEMICONDUCTING TELLURIUM MOLYBDATE GLASS

被引:26
作者
GHOSH, A
机构
[1] Solid State Physics Department, Indian Association for the Cultivation of Science
来源
PHYSICAL REVIEW B | 1992年 / 45卷 / 19期
关键词
D O I
10.1103/PhysRevB.45.11318
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Measurements are reported for the real and imaginary parts of the ac conductivity of semiconducting tellurium molybdate glass in the frequency range 10(2)-10(5) Hz and in the temperature range 80-350 K. The experimental results are interpreted in terms of the classical correlated-barrier hopping theory.
引用
收藏
页码:11318 / 11323
页数:6
相关论文
共 9 条
[1]   POLARONS IN CRYSTALLINE AND NON-CRYSTALLINE MATERIALS [J].
AUSTIN, IG ;
MOTT, NF .
ADVANCES IN PHYSICS, 1969, 18 (71) :41-+
[2]   THEORY OF AC CONDUCTION IN CHALCOGENIDE GLASSES [J].
ELLIOTT, SR .
PHILOSOPHICAL MAGAZINE, 1977, 36 (06) :1291-1304
[3]   AC CONDUCTION IN AMORPHOUS-CHALCOGENIDE AND PNICTIDE SEMICONDUCTORS [J].
ELLIOTT, SR .
ADVANCES IN PHYSICS, 1987, 36 (02) :135-218
[4]   FREQUENCY-DEPENDENT CONDUCTIVITY IN BISMUTH-VANADATE GLASSY SEMICONDUCTORS [J].
GHOSH, A .
PHYSICAL REVIEW B, 1990, 41 (03) :1479-1488
[5]   ELECTRICAL TRANSPORT-PROPERTIES OF MOLYBDENUM TELLURITE GLASSY SEMICONDUCTORS [J].
GHOSH, A .
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1990, 61 (01) :87-96
[6]   TRANSPORT-PROPERTIES OF VANADIUM GERMANATE GLASSY SEMICONDUCTORS [J].
GHOSH, A .
PHYSICAL REVIEW B, 1990, 42 (09) :5665-5676
[7]   FREQUENCY-DEPENDENT LOSS IN AMORPHOUS-SEMICONDUCTORS [J].
LONG, AR .
ADVANCES IN PHYSICS, 1982, 31 (05) :553-637
[8]  
MOTT NF, 1979, ELECTRONIC PROCESSES, P225
[9]   AC CONDUCTIVITY OF SCANDIUM OXIDE AND A NEW HOPPING MODEL FOR CONDUCTIVITY [J].
PIKE, GE .
PHYSICAL REVIEW B, 1972, 6 (04) :1572-&