ION-IMPLANTATION AND LASER ANNEALING

被引:9
作者
SORENSEN, G
机构
来源
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH | 1981年 / 186卷 / 1-2期
关键词
D O I
10.1016/0029-554X(81)90905-8
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
引用
收藏
页码:189 / 192
页数:4
相关论文
共 8 条
[1]  
BLOEMBERGEN N, 1979, LASER SOLID INTERACT, V50, P1
[2]   COMPARATIVE-STUDY OF ANNEALED NEON-ION, ARGON-ION, AND KRYPTON-ION IMPLANTATION DAMAGE IN SILICON [J].
CULLIS, AG ;
SEIDEL, TE ;
MEEK, RL .
JOURNAL OF APPLIED PHYSICS, 1978, 49 (10) :5188-5198
[3]   APPLICATION OF DIFFUSION THEORY TO INERT-GAS MOTION IN ION-BOMBARDED SOLIDS (DIFFUSION THEORY FOR DISCRETE MEDIA .3.) [J].
KELLY, R ;
MATZKE, H .
JOURNAL OF NUCLEAR MATERIALS, 1966, 20 (02) :171-&
[4]  
NIELSEN C, UNPUB
[5]  
ORON M, NBS SPECIAL PUBLICAT, V568
[6]  
Shtyrkov E. I., 1975, Optics and Spectroscopy, V38, P595
[7]   COHESION OF SOLIDS UNDER LASER IRRADIATION [J].
WAUTELET, M ;
LAUDE, LD .
APPLIED PHYSICS LETTERS, 1980, 36 (03) :197-199
[8]   EPITAXIAL REGROWTH OF NE-IMPLANTED AND KR-IMPLANTED AMORPHOUS SILICON [J].
WITTMER, M ;
ROTH, J ;
REVESZ, P ;
MAYER, JW .
JOURNAL OF APPLIED PHYSICS, 1978, 49 (10) :5207-5212