ELECTRIC RESISTIVITY OF AGO

被引：19

作者：

TVARUSKO, A

机构：

[1] Engineering Research Center, Western Electric Co., Inc., Princeton

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1968年 / 115卷 / 11期

关键词：

D O I：

10.1149/1.2410919

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The electric resistivity, ρ, of powder AgO samples, made by the chemical oxidation of AgNO3, was measured in situ up to 10 kbar. ρ increased linearly with decreasing AgO content of the samples (>70%). 63 AgO samples of 98.4% mean AgO content had a mean ρ of 59.3 ohm cm at 2.1 kbar. When Mg, Ca, Cd, In, Si, Y, Pd, Ni, or Co was added (as compounds) during the preparation of AgO, ρ of the sample increased. The addition of Hg, Ge, Sn, Pb, As, Sb, or Bi had a beneficial effect on ρ of AgO samples. Pb increased the length of the higher voltage plateau of AgO-Zn cells during discharge whereas Hg had no influence. © 1968, The Electrochemical Society, Inc. All rights reserved.

引用

页码：1105 / &

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