ELECTRIC-FIELD EFFECTS ON HGTE-BASED QUANTUM WELLS

被引：5

作者：

YANG, Z

FURDYNA, JK

机构：

[1] PURDUE UNIV,DEPT PHYS,W LAFAYETTE,IN 47907

[2] UNIV NOTRE DAME,DEPT PHYS,NOTRE DAME,IN 46556

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 10期

关键词：

D O I：

10.1063/1.342411

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5248 / 5250

页数：3

共 12 条

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MILLER, DAB ;

CHEMLA, DS ;

KOREN, U ;

MILLER, BI .

APPLIED PHYSICS LETTERS, 1987, 50 (15) :1010-1012

[2] QUANTUM WELL BOUND-STATES OF HGTE IN CDTE [J].

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[5] BAND-EDGE ELECTROABSORPTION IN QUANTUM WELL STRUCTURES - THE QUANTUM-CONFINED STARK-EFFECT [J].

MILLER, DAB ;

CHEMLA, DS ;

DAMEN, TC ;

GOSSARD, AC ;

WIEGMANN, W ;

WOOD, TH ;

BURRUS, CA .

PHYSICAL REVIEW LETTERS, 1984, 53 (22) :2173-2176

[6] NOVEL HYBRID OPTICALLY BISTABLE SWITCH - THE QUANTUM WELL SELF-ELECTRO-OPTIC EFFECT DEVICE [J].

MILLER, DAB ;

CHEMLA, DS ;

DAMEN, TC ;

GOSSARD, AC ;

WIEGMANN, W ;

WOOD, TH ;

BURRUS, CA .

APPLIED PHYSICS LETTERS, 1984, 45 (01) :13-15

[7] HGTE-CDTE SUPERLATTICES - EXPERIMENTAL AND THEORETICAL CURVES OF BAND-GAP VERSUS HGTE LAYER THICKNESS [J].

RENO, J ;

SOU, IK ;

FAURIE, JP ;

BERROIR, JM ;

GULDNER, Y ;

VIEREN, JP .

APPLIED PHYSICS LETTERS, 1986, 49 (02) :106-108

[8] K-P THEORY OF SEMICONDUCTOR SUPERLATTICE ELECTRONIC-STRUCTURE .1. FORMAL RESULTS [J].

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PHYSICAL REVIEW B, 1986, 33 (12) :8345-8359

[9] ELECTROABSORPTION IN AN INGAAS/GAAS STRAINED-LAYER MULTIPLE QUANTUM-WELL STRUCTURE [J].

VANECK, TE ;

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WIEDER, HH .

APPLIED PHYSICS LETTERS, 1986, 49 (03) :135-136

[10] STRONG POLARIZATION-SENSITIVE ELECTROABSORPTION IN GAAS/ALGAAS QUANTUM WELL WAVE-GUIDES [J].

WEINER, JS ;

MILLER, DAB ;

CHEMLA, DS ;

DAMEN, TC ;

BURRUS, CA ;

WOOD, TH ;

GOSSARD, AC ;

WIEGMANN, W .

APPLIED PHYSICS LETTERS, 1985, 47 (11) :1148-1150

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