CURRENT DIRECTIONS IN GAAS-LASER DEVICE DEVELOPMENT

[1] CHANNELED-SUBSTRATE PLANAR STRUCTURE (ALGA)AS INJECTION-LASERS [J]. APPLIED PHYSICS LETTERS, 1977, 30 (12) : 649 - 651

[2] [Anonymous], 1977, SEMICONDUCTOR LASERS

[3] [Anonymous], 1978, HETEROSTRUCTURE LASE

[4] DYNAMICS OF INJECTION LASERS [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1968, QE 4 (11) : 855 - +

[5] CONCENTRATION-DEPENDENCE OF ABSORPTION-COEFFICIENT FOR N-TYPE AND P-TYPE GAAS BETWEEN 1.3 AND 1.6 EV [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (01) : 250 - 257

[6] BEAM DIVERGENCE OF EMISSION FROM DOUBLE-HETEROSTRUCTURE INJECTION LASERS [J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (12) : 5470 - 5475

[7] LONG-TERM DEGRADATION OF GAAS-GA1-XALXAS DH LASERS DUE TO FACET EROSION [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (03) : 1160 - 1162

[8] CONTINUOUS ROOM-TEMPERATURE OPERATION OF GAAS-AL-XGA-1-XAS DOUBLE-HETEROSTRUCTURE LASERS PREPARED BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1976, 28 (09) : 501 - 503

[9] PULSE DELAY MEASUREMENTS IN ZERO MATERIAL DISPERSION WAVELENGTH REGION FOR OPTICAL FIBERS [J]. APPLIED OPTICS, 1977, 16 (12): : 3136 - 3139

[10] GAIN-INDUCED GUIDING AND ASTIGMATIC OUTPUT BEAM OF GAAS LASERS [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (04) : 1660 - 1672

[1] CHANNELED-SUBSTRATE PLANAR STRUCTURE (ALGA)AS INJECTION-LASERS [J]. APPLIED PHYSICS LETTERS, 1977, 30 (12) : 649 - 651

[2] [Anonymous], 1977, SEMICONDUCTOR LASERS

[3] [Anonymous], 1978, HETEROSTRUCTURE LASE

[4] DYNAMICS OF INJECTION LASERS [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1968, QE 4 (11) : 855 - +

[5] CONCENTRATION-DEPENDENCE OF ABSORPTION-COEFFICIENT FOR N-TYPE AND P-TYPE GAAS BETWEEN 1.3 AND 1.6 EV [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (01) : 250 - 257

[6] BEAM DIVERGENCE OF EMISSION FROM DOUBLE-HETEROSTRUCTURE INJECTION LASERS [J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (12) : 5470 - 5475

[7] LONG-TERM DEGRADATION OF GAAS-GA1-XALXAS DH LASERS DUE TO FACET EROSION [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (03) : 1160 - 1162

[8] CONTINUOUS ROOM-TEMPERATURE OPERATION OF GAAS-AL-XGA-1-XAS DOUBLE-HETEROSTRUCTURE LASERS PREPARED BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1976, 28 (09) : 501 - 503

[9] PULSE DELAY MEASUREMENTS IN ZERO MATERIAL DISPERSION WAVELENGTH REGION FOR OPTICAL FIBERS [J]. APPLIED OPTICS, 1977, 16 (12): : 3136 - 3139

[10] GAIN-INDUCED GUIDING AND ASTIGMATIC OUTPUT BEAM OF GAAS LASERS [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (04) : 1660 - 1672