SPECIFIC CONTACT RESISTIVITY OF INGAAS/INP P-ISOTYPE HETEROJUNCTIONS

被引：10

作者：

WASSERBAUER, JG ^{[1
]}

BOWERS, JE ^{[1
]}

HAFICH, MJ ^{[1
]}

SILVESTRE, P ^{[1
]}

WOODS, LM ^{[1
]}

ROBINSON, GY ^{[1
]}

机构：

[1] COLORADO STATE UNIV,FT COLLINS,CO 80523

来源：

ELECTRONICS LETTERS | 1992年 / 28卷 / 17期

关键词：

OHMIC CONTACTS; SEMICONDUCTOR DEVICES AND MATERIALS;

D O I：

10.1049/el:19920998

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The specific contact resistivity of lattice matched InGaAs/InP p-isotype heterojunctions has been measured through the use of an interface transmission line model structure. The measured resistance values are comparable to or greater than those of the metal/semiconductor interface and depend heavily on the doping and the abrupt or graded nature of the interface.

引用

页码：1568 / 1570

页数：3