CHARGED DEFECTS IN VITREOUS SILICA

被引：5

作者：

GINZBURG, LP

机构：

[1] Department of Physics, Moscow Technical University of Communications and Informatics

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1994年 / 171卷 / 02期

关键词：

D O I：

10.1016/0022-3093(94)90352-2

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

It is shown that special treatments of the conduction band mobility edge position and especially the luminescence spectra indicate that valence alternating pair (VAP) defects must exist in v-SiO2. The number density of such defects is found to be approximately 10(19) cm-3.

引用

页码：164 / 171

页数：8

共 31 条

[1]

CHANDRASEKHAR S, 1941, REV MOD PHYS, V13, P1203

[2] THEORY OF AMORPHOUS SIO2 AND SIOX .2. ELECTRON-STATES IN AN INTRINSIC GLASS [J].