COMPOSITION EFFECTS IN FLASH EVAPORATED CUIN(SEXTE1-X)(2) FILMS

Thin films with composition around CuInSeTe and CuInSe ₁1.₁₅5₅Te ₀0.5 ₅have been deposited by “flash” evaporation. The structural, electrical, optical, and surface [x-ray photoelectron spectroscopy (XPS) measurements] properties have been determined. Chalcogen content is always lower than 50 %and crystallinity is higher when Se content increases. The samples always show p-type conduction even when the defect of chalcogen is 5 %with resistivities in the 0.5-8.6 Ωcm range. The energy gap is in the 0.81-1.11 eV range. XPS measurements indicate that, after exposure to air, only the Te species presents two oxidation states preventing oxidation of the remaining elements. These properties are analyzed in terms of indium segregation at grain boundaries, anion vacancies, and cation disorder in the samples. © 1994, American Vacuum Society. All rights reserved.