PLASMA ANODIZATION OF GERMANIUM

被引：13

作者：

OHANLON, JF

机构：

[1] IBM Research Center

来源：

APPLIED PHYSICS LETTERS | 1969年 / 14卷 / 04期

关键词：

D O I：

10.1063/1.1652743

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A model is presented for the measurement of the voltage drop across a plasma anodized germanium film. This model proposes that the potential at the plasma - oxide interface is controlled by the plasma. From this model the anodization constant of germanium has been determed to be 31 Å/V. © 1969 The American Institute of Physics.

引用

页码：127 / &

共 4 条

[1] SPUTTERING OF OXIDE FILMS IN PLASMA ANODIZATION OF ALUMINUM [J].