ATMOSPHERIC-PRESSURE MOVPE GROWTH OF HIGH-PERFORMANCE POLARIZATION-INSENSITIVE STRAIN COMPENSATED MQW INGAASP/INGAAS OPTICAL AMPLIFIER

被引：18

作者：

OUGAZZADEN, A

SIGOGNE, D

MIRCEA, A

RAO, EVK

RAMDANE, A

SILVESTRE, L

机构：

[1] France Telecom CNET-Paris B, Laboratoire de Bagneux, 196 rue H. Ravera, BP 17

来源：

ELECTRONICS LETTERS | 1995年 / 31卷 / 15期

关键词：

VAPOR PHASE EPITAXIAL GROWTH; SEMICONDUCTOR QUANTUM WELLS; SEMICONDUCTOR OPTICAL AMPLIFIERS;

D O I：

10.1049/el:19950827

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The authors report a structure for a polarisation insensitive amplifier at 1.55 mu m wavelength using 16 compensated strain InGaAsP/InGaAs quantum wells. A high gain of 27 dB for TE and TM modes has been obtained. Polarisation sensitivity less than 1 dB over 85 nm bandwidth has been measured. These results are among the best reported.

引用

页码：1242 / 1244

页数：3

共 4 条

[1] 1.55-MU-M POLARIZATION-INSENSITIVE OPTICAL AMPLIFIER WITH STRAIN-BALANCED SUPERLATTICE ACTIVE LAYER
GODEFROY, A
LECORRE, A
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[J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 1995, 7 (05) : 473 - 475
[2] JOMA M, 1992, 13TH IEEE SEM LAS C
[3] POLARIZATION-INSENSITIVE OPTICAL AMPLIFIER WITH TENSILE-STRAINED-BARRIER MQW STRUCTURE
MAGARI, K
OKAMOTO, M
SUZUKI, Y
SATO, K
NOGUCHI, Y
MIKAMI, O
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1994, 30 (03) : 695 - 702
[4] POLARIZATION INSENSITIVE MULTIPLE QUANTUM-WELL LASER-AMPLIFIERS FOR THE 1300 NM WINDOW
TIEMEIJER, LF
THIJS, PJA
VANDONGEN, T
SLOOTWEG, RWM
VANDERHEIJDEN, JMM
BINSMA, JJM
KRIJN, MPCM
[J]. APPLIED PHYSICS LETTERS, 1993, 62 (08) : 826 - 828

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