NEAR-SURFACE ATOMIC SEGREGATION IN YBCO THIN-FILMS

被引：9

作者：

GAVALER, JR

BRAGINSKI, AI

机构：

[1] Westinghouse R&D Cent, United States

来源：

PHYSICA C | 1988年 / 153卷 / 02期

关键词：

Ceramic Materials--Thin Films - Oxides;

D O I：

10.1016/0921-4534(88)90358-9

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In amorphous YBCO films annealed in O2 at 475 to 550°C prior to crystalline compound formation, atomic segregation of Ba to the film surface is observed. The thickness of the segregated layer decreases with increasing oxygen pressure during film deposition. Fast heating to the compound-formation temperature minimizes segregation.

引用

页码：1435 / 1436

页数：2