DEPOSITION OF SILICA FILMS BY THE OXIDATION OF SILANE IN OXYGEN .1. KINETICS AND PHYSICOCHEMICAL MODEL OF THE PROCESS

被引：24

作者：

VASILYEVA, LL

DROZDOV, VN

REPINSKY, SM

SVITASHEV, KK

机构：

来源：

关键词：

D O I：

10.1016/0040-6090(78)90052-4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：221 / 228

页数：8

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