HIGH AVERAGE POWER EDGE EMITTING LASER DIODE-ARRAYS ON SILICON MICROCHANNEL COOLERS

被引：13

作者：

MUNDINGER, D

BEACH, R

BENETT, W

SOLARZ, R

SPERRY, V

CIARLO, D

机构：

来源：

APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 21期

关键词：

D O I：

10.1063/1.103925

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have demonstrated high average power output devices in both one-dimensional (1-D) and two-dimensional (2-D) arrays of laser diodes using efficient edge emitting cleaved bars and silicon microchannel coolers. These packages are based on the rack and stack architecture. For the 1-D array a cw optical power output of 22.2 W was obtained with 20% electrical to optical conversion efficiency. For the 2-D array an average optical power density of greater than 100 W/cm2 was obtained at an efficiency of 25%.

引用

页码：2172 / 2174

页数：3

共 4 条

[1]

EMMETT JJ, 1984, UCRL53571 LAWR LIV N

[2]

Mott J. S., 1989, IEEE Photonics Technology Letters, V1, P202, DOI 10.1109/68.36042

[3] DEMONSTRATION OF HIGH-PERFORMANCE SILICON MICROCHANNEL HEAT-EXCHANGERS FOR LASER DIODE-ARRAY COOLING [J].

MUNDINGER, D ;

BEACH, R ;

BENETT, W ;

SOLARZ, R ;

KRUPKE, W ;

STAVER, R ;

TUCKERMAN, D .

APPLIED PHYSICS LETTERS, 1988, 53 (12) :1030-1032

[4] HIGH-PERFORMANCE HEAT SINKING FOR VLSI [J].

TUCKERMAN, DB ;

PEASE, RFW .

ELECTRON DEVICE LETTERS, 1981, 2 (05) :126-129

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