ON THE THEORY OF THE SURFACE PHOTOVOLTAGE TECHNIQUE BASED ON THE FLAT QUASI-FERMI LEVEL APPROXIMATION

被引：9

作者：

JANG, SL

机构：

[1] Department of Electronic Engineering, National Taiwan Institute of Technology, Taipei

来源：

SOLID-STATE ELECTRONICS | 1991年 / 34卷 / 04期

关键词：

Crystalline Semiconductors - Quasi-Fermi Level;

D O I：

10.1016/0038-1101(91)90166-V

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Using Schottky barrier structures made of crystalline semiconductors, taking into account both of the thermionic emission current, and the recombination currents in the depletion region and at the surface states, we developed a simple theory for the steady-state surface photovoltage method based on the flat quasi-Fermi level approximation and we discuss the conditions under which the flat quasi-Fermi level approximation can be used.

引用

页码：373 / 377

页数：5

共 9 条

[1] ON THE THEORETICAL BASIS OF THE SURFACE PHOTOVOLTAGE TECHNIQUE [J].