ZERO-BIAS ANOMALY IN IRRADIATED PB-GAAS TUNNEL JUNCTIONS, AND MOTT TRANSITION

被引:14
作者
MORA, NA
BERMON, S
LOFERSKI, JJ
机构
关键词
D O I
10.1103/PhysRevLett.27.664
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:664 / &
相关论文
共 14 条
[1]   SEMICONDUCTOR-TO-METAL TRANSITION IN N-TYPE GROUP 4 SEMICONDUCTORS [J].
ALEXANDER, MN ;
HOLCOMB, DF .
REVIEWS OF MODERN PHYSICS, 1968, 40 (04) :815-+
[2]   EXCHANGE MODEL OF ZERO-BIAS TUNNELING ANOMALIES [J].
APPELBAUM, JA .
PHYSICAL REVIEW, 1967, 154 (03) :633-+
[3]  
AUKERMAN LW, 1968, SEMICONDUCT SEMIMET, V4, pCH6
[5]   SUPERCONDUCTIVITY OF SMALL TIN PARTICLES MEASURED BY TUNNELING [J].
GIAEVER, I ;
ZELLER, HR .
PHYSICAL REVIEW LETTERS, 1968, 20 (26) :1504-&
[6]   TUNNELING INTO AND THROUGH EVAPORATED SEMICONDUCTING FILMS [J].
GIAEVER, I ;
ZELLER, HR .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1969, 6 (04) :502-&
[7]  
GIAEVER I, 1969, PHYS REV B, V181, P789
[9]  
MORA NA, TO BE PUBLISHED
[10]   CONDUCTION IN NON-CRYSTALLINE SYSTEMS .2. METAL-INSULATOR TRANSITION IN A RANDOM ARRAY OF CENTRES [J].
MOTT, NF ;
DAVIS, EA .
PHILOSOPHICAL MAGAZINE, 1968, 17 (150) :1269-&