PHOTOVOLTAIC EFFECTS IN METAL/SEMICONDUCTOR BARRIER STRUCTURES WITH BORON-DOPED POLYCRYSTALLINE DIAMOND FILMS

被引：10

作者：

POLYAKOV, VI

PEROV, PI

ROSSUKANYI, NM

RUKOVISHNIKOV, AI

KHOMICH, AV

PRELAS, MA

KHASAWINAH, S

SUNG, T

POPOVICI, G

机构：

[1] UNIV MISSOURI,DEPT NUCL ENGN,COLUMBIA,MO 65211

[2] ROCKFORD DIAMOND TECHNOL,CHAMPAIGN,IL 61820

来源：

THIN SOLID FILMS | 1995年 / 266卷 / 02期

关键词：

ELECTRICAL PROPERTIES AND MEASUREMENTS; BORON; DIAMOND; DOPING; SEMICONDUCTORS;

D O I：

10.1016/0040-6090(95)06737-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Metal/semiconductor unipolar barrier structures with boron-doped polycrystalline diamond films were fabricated and their electrical and photoelectric properties investigated. The photovoltage of a photoconverter exceeded 0.7 V as measured in open circuit and could be controlled by the bias voltage. A memory effect was evidenced in metal/polycrystalline diamond structures which consists of an increasing photovoltage after a short time biasing.

引用

页码：278 / 281

页数：4

共 7 条

[1]

AVDEEVA LA, 1973, MIKROELEKTRONIKA, V2, P359

[2]

GONON P, 1964, J APPL PHYS, V76, P3929

[3]

KHASAVINAH S, 1993, ELECTROCHEMICAL SOC, V93, P1032

[4]

Kwok K., 1981, PHYS SEMICONDUCTOR D, P790

[5]

PEROV PI, 1995, NATO ASI SUB SERIES, V1, P173

[6] DIAMOND PHOTOVOLTAIC CELLS AS A 1ST-WALL MATERIAL AND ENERGY-CONVERSION SYSTEM FOR INERTIAL CONFINEMENT FUSION [J].

PRELAS, MA ;

CHARLSON, EJ ;

CHARLSON, EM ;

MEESE, JM ;

POPOVICI, G ;

STACY, T .

LASER AND PARTICLE BEAMS, 1993, 11 (01) :65-79

[7]

PRELAS MA, 1993, 2ND INT C APPL DIAM, P329

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