GUNN INSTABILITIES WITH SURFACE LOADING

被引：14

作者：

HARTNAGE.HL

机构：

[1] Department of Electronic & Electrical Engineering, University of Sheffield

来源：

ELECTRONICS LETTERS | 1969年 / 5卷 / 14期

关键词：

D O I：

10.1049/el:19690231

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The conditions for Gunn-effect domain formation are derived for the cases of loading the semiconductor surface with magnetic or dielectric materials. This allows one to explain the experimental results obtained with BaTiO3 by Kataoka et al. © 1969, The Institution of Electrical Engineers. All rights reserved.

引用

页码：303 / &