ELECTRON MOBILITY IN GASB AT 77 DEGREES K

被引:45
作者
BAXTER, RD
REID, FJ
BEER, AC
机构
来源
PHYSICAL REVIEW | 1967年 / 162卷 / 03期
关键词
D O I
10.1103/PhysRev.162.718
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:718 / &
相关论文
共 48 条
[1]  
ADAWI I, UNPUBLISHED
[2]  
[Anonymous], 1966, SEMICONDUCTORS SEMIM
[3]   ELECTRON-ELECTRON SCATTERING AND TRANSPORT PHENOMENA IN NONPOLAR SEMICONDUCTORS [J].
APPEL, J .
PHYSICAL REVIEW, 1961, 122 (06) :1760-&
[5]   CONDUCTION ELECTRON SCATTERING BY IONIZED DONORS IN INSB AT 80DEGREES K [J].
BATE, RT ;
BAXTER, RD ;
REID, FJ ;
BEER, AC .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1965, 26 (08) :1205-&
[6]   ION-PAIRING BETWEEN LITHIUM AND RESIDUAL ACCEPTORS IN GASB [J].
BAXTER, RD ;
BATE, RT ;
REID, FJ .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1965, 26 (01) :41-&
[7]  
BAXTER RD, 1965, B AM PHYS SOC, V10, P599
[8]   ENERGY BAND STRUCTURE OF GALLIUM ANTIMONIDE [J].
BECKER, WM ;
FAN, HY ;
RAMDAS, AK .
JOURNAL OF APPLIED PHYSICS, 1961, 32 :2094-&
[9]  
BEER AC, 1955, HELV PHYS ACTA, V28, P529
[10]  
BEER AC, 1963, GALVANOMAGNETIC EFFE, pCH6