AN EVAPORATED HETEROJUNCTION DIODE STRAIN SENSOR

被引：3

作者：

MOORE, RM

BUSANOVICH, CJ

机构：

[1] RCA Labs., David Sarnoff Research Ctr., Princeton, N. J.

来源：

PROCEEDINGS OF THE IEEE | 1969年 / 57卷 / 04期

关键词：

D O I：

10.1109/PROC.1969.7060

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Using a new device concept, a unique semiconductor strain sensor has been demonstrated in the laboratory. It is a p-n heterojunction diode which is fabricated by vacuum evaporation techniques directly onto a flexible substrate. This sensor's mechanical input properties are controlled by the choice of substrate, and it has a low-impedance voltage source output characteristic. Copyright © 1969 by The Institute of Electrical and Electronics Engineers, Inc.

引用

页码：735 / +

页数：1