SEMICONDUCTOR PROPERTIES OF RECRYSTALLIZED SILICON IN ALUMINUM ALLOY JUNCTION DIODES

被引：20

作者：

GUDMUNDSEN, RA

MASERJIAN, J

机构：

来源：

关键词：

D O I：

10.1063/1.1722640

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1308 / 1316

页数：9

共 11 条

[1] ELECTRICAL PROPERTIES OF NEAR-DEGENERATE BORON-DOPED SILICON [J].

CARLSON, RO .

PHYSICAL REVIEW, 1955, 100 (04) :1075-1078

[2]

CRAIGHEAD, 1955, T AM I MINING MET EN, V81

[3]

DASH WC, 1955, PHYS REV, V99, P1154

[4]

FINK, 1948, METALS HDB, P1166

[5]

FINK W, 1934, AM I MINING MET ENG, V580, P1

HALL, RN .

[7] DIFFUSION OF ALUMINUM IN SINGLE CRYSTAL SILICON [J].

MILLER, RC ;

SAVAGE, A .

[8]

PRINCE MB, 1954, PHYS REV, V93, P1205

[9]

SHOCKLEY W, 1950, ELECTRONS HOLES SEMI, P299

[10]

SMITHELLS CJ, 1955, METALS REFERENCE BOO, P322