CHARACTERISTICS OF PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITED TUNGSTEN NITRIDE THIN-FILMS

被引：50

作者：

LEE, CW

KIM, YT

MIN, SK

机构：

[1] KOREA INST SCI & TECHNOL,SEMICOND MAT LAB,POB 131,SEOUL,SOUTH KOREA

[2] KOREA ADV INST SCI & TECHNOL,TAEJON,SOUTH KOREA

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 25期

关键词：

D O I：

10.1063/1.109622

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Low resistive tungsten nitride (W100-xNx) thin films have been deposited at 350-400-degrees-C by plasma enhanced chemical vapor deposition. X-ray photoemission spectroscopy, Rutherford backscattering spectrometry, and x-ray diffraction show that the nitrogen composition in W100-xNx films can be easily controlled between 15 and 72 at. % corresponding to an increase of the NH3/WF6 partial pressure ratio and fcc structure W2N can be obtained. The resistivities of W100-xNx films are varied from 70 to 440 muOMEGA cm according to nitrogen composition.

引用

页码：3312 / 3314

页数：3

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