MOSI2 FORMATION BY RAPID ISOTHERMAL ANNEALING

被引：19

作者：

FULKS, RT ^{[1
]}

POWELL, RA ^{[1
]}

STACY, WT ^{[1
]}

机构：

[1] SIGNET CORP, PHILIPS RES LAB, SUNNYVALE, CA 94086 USA

来源：

ELECTRON DEVICE LETTERS | 1982年 / 3卷 / 07期

关键词：

D O I：

10.1109/EDL.1982.25529

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：179 / 181

页数：3

共 11 条

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