2-DIMENSIONAL ELECTRON-GAS AT A SEMICONDUCTOR-SEMICONDUCTOR INTERFACE

被引：398

作者：

STORMER, HL

DINGLE, R

GOSSARD, AC

WIEGMANN, W

STURGE, MD

机构：

[1] Bell Laboratories, Murray Hill

来源：

SOLID STATE COMMUNICATIONS | 1979年 / 29卷 / 10期

关键词：

D O I：

10.1016/0038-1098(79)91010-X

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We report the first observation of a two-dimensional electron gas at a semiconductor-semiconductor (GaAs-AℓGaAs) interface. A novel, high-mobility, persistent-photoconductive effect allows one to vary the two-dimensional carrier concentration continuously from 1.1 × 1012 cm-2 to 1.6 × 1012 cm-2, as obtained by Shubnikov-deHaas measurements. Cyclotron resonance data establish an effective mass of 1.11 m{star, open}b, where m{star, open}b is the mass at the conduction-band edge of GaAs. Hall data and cyclotron resonance yield a mobility of μ ≈ 5000 cm2/Vsec. © 1979.

引用

页码：705 / 709

页数：5

共 16 条

[1]

ABSTREITER G, 1976, PHYS REV B, V14, P2480, DOI 10.1103/PhysRevB.14.2480

[2]

AGGARWAL RLA, 1972, SEMICONDUCTOR SEMIME, V9, P221

[3] THEORY OF CYCLOTRON-RESONANCE LINESHAPE IN A 2-DIMENSIONAL ELECTRON-SYSTEM [J].