ANELASTIC RELAXATION IN SILICON DOPED WITH LITHIUM AND BORON

被引：7

作者：

BERRY, BS

机构：

来源：

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 1970年 / 31卷 / 08期

关键词：

D O I：

10.1016/0022-3697(70)90174-5

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

引用

页码：1827 / &

共 24 条

[1] EXCITATION SPECTRA OF LITHIUM DONORS IN SILICON AND GERMANIUM [J].

AGGARWAL, RL ;

FISHER, P ;

MOURZINE, V ;

RAMDAS, AK .

PHYSICAL REVIEW, 1965, 138 (3A) :A882-&

[2] INFRARED STUDY OF LOCALIZED VIBRATIONS IN SILICON DUE TO BORON AND LITHIUM [J].

BALKANSKI, M ;

NAZAREWICZ, W .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1966, 27 (04) :671-+

[3]

Berry B. S., 1966, PHYS ACOUST A, VIII, P1

[4] PRECISE INVESTIGATION OF THE THEORY OF DAMPING BY TRANSVERSE THERMAL CURRENTS [J].

BERRY, BS .

JOURNAL OF APPLIED PHYSICS, 1955, 26 (10) :1221-1224

[5] AN INVESTIGATION OF INTERSTITIAL SITES IN BCC LATTICE [J].

BESHERS, DN .

JOURNAL OF APPLIED PHYSICS, 1965, 36 (01) :290-&

[6] ELECTRON SPIN RESONANCE EXPERIMENTS ON DONORS IN SILICON .1. ELECTRONIC STRUCTURE OF DONORS BY THE ELECTRON NUCLEAR DOUBLE RESONANCE TECHNIQUE [J].

FEHER, G .

PHYSICAL REVIEW, 1959, 114 (05) :1219-1244

[7] MOBILITY OF IMPURITY IONS IN GERMANIUM AND SILICON [J].

FULLER, CS ;

SEVERIENS, JC .

PHYSICAL REVIEW, 1954, 96 (01) :21-24

[8] SOLUBILITY OF LITHIUM IN SILICON [J].

FULLER, CS ;

REISS, H .

JOURNAL OF CHEMICAL PHYSICS, 1957, 27 (01) :318-319

[9]

FULLER CS, 1959, SEMICONDUCTORS, P192

[10] RESISTIVITY OF BULK SILICON AND OF DIFFUSED LAYERS IN SILICON [J].

IRVIN, JC .

BELL SYSTEM TECHNICAL JOURNAL, 1962, 41 (02) :387-+

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