COMMENTS ON THEORY OF PHOTOIONIZATION OF TRANSITION METAL IMPURITIES IN SEMICONDUCTORS

被引：28

作者：

LANGER, JM

机构：

来源：

PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1971年 / 47卷 / 02期

关键词：

D O I：

10.1002/pssb.2220470209

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：443 / &

共 11 条

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[3]

BARANOWSKI JM, TO BE PUBLISHED

[4]

BARANOWSKI JM, 1971, 2 6 P COMP SEM JASZ

CARDONA, M .

[6]

DEXTER DL, 1958, SOLID STATE PHYS, V6, P355

[7] BAND STRUCTURE OF INDIUM ANTIMONIDE [J].

KANE, EO .

[8]

KORENBLIT LL, 1968, FIZ TEKH POLUPROV, V2, P675

LANGER, JM ;

BARANOWSKI, JM .

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1971, 44 (01) :155-+

[10]

LANGER JM, 1971, THESIS WARSAW U