CHARGE SENSITIVITY OF THE SINGLE ELECTRON-TUNNELING TRANSISTOR WITH DISCRETE ENERGY-SPECTRUM

被引:19
作者
AVERIN, DV [1 ]
机构
[1] MOSCOW MV LOMONOSOV STATE UNIV, DEPT PHYS, MOSCOW 119899, RUSSIA
关键词
D O I
10.1063/1.353075
中图分类号
O59 [应用物理学];
学科分类号
摘要
The charge sensitivity of the single electron tunneling transistor is calculated in the regime when the discreteness of electron energy spectrum of its middle electrode is important.
引用
收藏
页码:2593 / 2595
页数:3
相关论文
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