RESONANT ELECTRONIC STATES IN DISORDERED-SYSTEMS

被引:15
作者
KARPOV, VG
机构
[1] Materials Science Division, Argonne National Laboratory, Argonne
来源
PHYSICAL REVIEW B | 1993年 / 48卷 / 07期
关键词
D O I
10.1103/PhysRevB.48.4325
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Long-lived quasilocalized (resonant) electronic states are predicted to lie above the mobility edge of a disordered system. A modification of the optimum fluctuation method is developed to estimate the density of such states. It is shown that the density of states tails exponentially with energy above the mobility edge and that this tail is almost symmetric to the tail of localized states with respect to the mobility edge. Possible manifestations of the predicted states are discussed.
引用
收藏
页码:4325 / 4328
页数:4
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