CRYSTAL-GROWTH OF IV-VI SEMICONDUCTORS IN A CENTRIFUGE

被引：43

作者：

RODOT, H ^{[1
]}

REGEL, LL ^{[1
]}

TURTCHANINOV, AM ^{[1
]}

机构：

[1] ACAD SCI USSR,SPACE RES INST,MOSCOW 117333,USSR

来源：

JOURNAL OF CRYSTAL GROWTH | 1990年 / 104卷 / 02期

关键词：

D O I：

10.1016/0022-0248(90)90127-7

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Crystals of Ag-doped PbTe and Pb0.83Sn0.17Te have been grown in a Bridgman furnace placed at the extremity of the arm of a centrifuge. The melt is thus submitted to a force Ng which may be larger than the gravity force g. The surcharge N changes the convection regime in the melt. It was found that, for a well-defined value Ns of the surcharge, the crystals were more perfect and the impurity profile became similar to the profile found for non-conventive conditions. Ns is independent of the material and of the geometry of the liquid, but depends on the arm length of the centrifuge. © 1990.

引用

页码：280 / 284

页数：5