CHARACTERIZATION OF GAAS-LAYERS GROWN ON POLYCRYSTALLINE GAAS BY LPE AND CURRENT CONTROLLED LPE

被引：5

作者：

ABULFADL, A

STEFANAKOS, E

NANCE, W

COLLIS, W

MCPHERSON, J

机构：

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1980年 / 9卷 / 03期

关键词：

D O I：

10.1007/BF02652940

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：621 / 638

页数：18

共 22 条

[1] PELTIER COOLING AT A IN-INP INTERFACE [J].

ABULFADL, A ;

STEFANAKOS, EK .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (10) :4627-4628

[2] CURRENT CONTROLLED LPE GROWTH OF INP [J].

ABULFADL, A ;

STEFANAKOS, EK .

JOURNAL OF CRYSTAL GROWTH, 1977, 39 (02) :341-345

[3] COMPUTER SIMULATIONS OF LIQUID PHASE EPITAXY OF GAAS IN GA SOLUTION [J].

CROSSLEY, I ;

SMALL, MB .

JOURNAL OF CRYSTAL GROWTH, 1971, 11 (02) :157-&

[4] CW GAAS-GAALAS DH LASERS GROWN BY PELTIER-INDUCED LPE [J].

DANIELE, JJ ;

CAMMACK, DA ;

ASBECK, PM .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (03) :914-916

[5] EXPERIMENTS SHOWING ABSENCE OF ELECTROMIGRATION OF AS AND AL IN PELTIER LPE OF GAAS AND GA1-XALXAS [J].

DANIELE, JJ .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (07) :1143-1144

[6] PELTIER-INDUCED LPE AND COMPOSITION STABILIZATION OF GAALAS [J].

DANIELE, JJ .

APPLIED PHYSICS LETTERS, 1975, 27 (07) :373-375

[7]

DANIELE JJ, 1974, I PHYS C SER, V24, P155

[8] ATOM MOTION IN LIQUID ALLOYS IN PRESENCE OF AN ELECTRIC FIELD [J].

EPSTEIN, SG ;

PASKIN, A .

PHYSICS LETTERS A, 1967, A 24 (06) :309-+

[9]

HSIEH JJ, 1974, J CRYST GROWTH, V27, P49, DOI 10.1016/0022-0248(74)90418-7

[10] SURFACE MORPHOLOGY OF GAAS LAYERS GROWN BY ELECTROEPITAXY AND THERMAL LPE [J].

IMAMURA, Y ;

JASTRZEBSKI, L ;

GATOS, HC .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (09) :1560-1561

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