NONADIABATIC SURFACE-REACTION - MECHANISM OF ELECTRON-EMISSION IN THE CS+O-2 SYSTEM

被引：82

作者：

BOTTCHER, A

IMBECK, R

MORGANTE, A

ERTL, G

机构：

[1] Fritz-Haber-Institut der Max-Planck-Gesellschaft, D-1000 Berlin 33

来源：

PHYSICAL REVIEW LETTERS | 1990年 / 65卷 / 16期

关键词：

D O I：

10.1103/PhysRevLett.65.2035

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Electron emission during oxidation of thin Cs films is confined to the stage Cs2O2†CsO2 and is caused by Auger deexcitation accompanying the (formal) reaction O22-(s)+O2†2O2-(s). This nonadiabatic process becomes possible because resonance ionization of the affinity level of the impinging O2 molecule upon crossing the Fermi level EF is efficiently suppressed due to the absence of occupied states near EF at the surface. © 1990 The American Physical Society.

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页码：2035 / 2037

页数：3

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